Fig. 1The chemical structures of As2O3 and As4O6. The shaded bigger circles and empty smaller circles represent As and O, respectively.
Fig. 2Growth inhibition patterns of As2O3 and As4O6 in SiHa cells in vitro. Cells were treated with the indicated amount of the two arsenic compounds, As2O3 and As4O6, over 4 day incubation periods. Cell growth suppression was measured as described in "Methods and Materials." OD was measured at 570 nm. The assay was performed in triplicate, with the average OD values and SD recorded, which was repeated twice more, with similar results. *Statistically significant at p<0.05, using the paired Student's t-test, compared to no drug treatment (control, CTL).
Fig. 3Induction of DNA ladder formation (A) and sub-G1 cell population (B) in SiHa cells due to treatment with As2O3 and As4O6. Cells were treated with 0.5 and 1 µM of As2O3 or As4O6 for 48 h. (A) DNA was analyzed on a 2% agarose gel and photographed under UV light (Con: Control, SM: Size marker). (B) Cells were stained with propidium iodide, and analyzed using flow cytometer, for the detection of the sub-G1 population.
Fig. 4The induction of early and late apoptotic cells in SiHa cells due to treatment with As2O3 and As4O6. Cells were treated with 0.5 and 1 µM of As2O3 or As4O6 for 48 h. Cells were stained with both annexin V-FITC and propidium iodide, and then analyzed for different apoptotic cell populations using flow cytometry.
Fig. 5Western blots of the cell proliferation marker and apoptosis-related proteins in SiHa cells due to treatment with As2O3 and As4O6. Cells were treated with 0.5 and 1 µM of As2O3 or As4O6 for 48 h. The cells were harvested and the cell lysates run on 12% SDS-PAGE. Subsequent protein bands were transblotted onto a nitrocellulose membrane for an immunoblot assay.